And the large surface area of mesoporous TiO 2 nanoparticles also inevitably introduce a large number of defects on the MoS 2 surface. However, the device fabrication is complex, accompanying with the highly challenging penetration of pore-transport materials. deposited the mixture of TiO 2 nanoparticles and MoS 2 nanoparticles on ITO substrate to form dye sensitized solar cells (DSSCs) with a structure of TiO 2/MoS 2/P3HT/Au, which delivers a power conversion efficiency of 1.3% (Shanmugam et al., 2012). S), which exhibits a good electronic conductivity and expects to be effectively used in solar cells as absorber material (Radisavljevic et al., 2011).Encouragingly the carrier mobility of the MoS 2 bulk is as high as 517 cm 2/(V calculated the dielectric constant and absorber coefficient increase with the increase of the film thickness, confirming that the MoS 2 film with a thickness of 49 Å was not affected by the quantum size effect and was sufficient for the fabrication of solar cell (Dashora et al., 2013). built a Schottky junction on the mono-layer MoS 2/Au interface with a PCE of 1.8% (Shanmugam et al., 2012). For the nanostructure device, single-layer MoS 2 film less than 1 nm can absorb 5%-10% of sunlight (Bernardi et al., 2013). The limited application of MoS 2 in solar cells can be divided into two different architectures, such as MoS 2 nanosheets and MoS 2 bulks. But the related research of MoS 2 based solar cell is rarely reported. have revealed that MoS 2 materials have a higher absorber rate of sunlight than commonly used solar absorber (Si and GaAs) (Bernardi et al., 2013), and indicates that MoS 2 material have untapped potential for solar energy absorber. In addition to applications in ETL and HTL, MoS 2 also has a suitable band gap and a high absorber coefficient, meeting the requirements of absorber materials for solar cell (Hao et al., 2015). employed MoS 2 as HTL, and the PCE of perovskite device can reach almost 20% (Gu et al., 2013). used MoS 2 nanosheets as ETL and obtained perovskite solar cell with a power conversion efficiency (PCE) of 16.17% (Mahmood et al., 2020). Recently, MoS 2 is widely used as electron transport layer (ETL) or hole transport layer (HTL) in perovskite solar cells (PSCs). The high electrical conductivity, excellent charge transfer and fewer defect density make it attractive for photovoltaic applications (Bai et al., 2018). Specially, as one of typical two-dimensional layer materials, the mono- or few-layer MoS 2 has been extensively studied because of its fascinating optical and electric properties (Hao et al., 2015, Ma et al., 2018, Dashora et al., 2013). It has remarkable photoelectric properties, such as variable energy band gap, large absorption coefficient (more than 10 5 cm −1), high electrical conductivity, which has aroused much interest in water splitting, photoluminescence, photocatalytic, phototransistors (Ji et al., 2013, Wang et al., 2014, Late et al., 2012, Zhang et al., 2013, Wang et al., 2013, Chen et al., 2018). MoS 2 is a new two-dimensional semiconductor material with graphene-like characteristics. This work provides an in-situ growth route for constructing a CdS/MoS 2 planar heterojunction as a potential candidate for the low-cost solar cells. After optimizing the doping density (1 × 10 15 cm −3) and defect density (<5 × 10 15 cm −3) of MoS 2 film as well as inserting a hole transport layer, the efficiency of MoS 2 planar device can be enhanced to 10.77%.
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The one-dimensional solar cell capacitance simulator (SCAPS) is further used to reveal the bottleneck of device performance. The effects of the growth characteristics, morphology changes and optical properties of MoS 2 on the device performance are studied systematically. Finally, a primary efficiency of 0.12% is achieved using a P-type MoS 2 absorber with a thickness of 305 nm, exhibiting an outstanding stability.
Then a device with ITO/TiO 2/CdS/MoS 2/Carbon-Ag structure is assembled after coating carbon-Ag electrode. The CdS buffer layer provides a robust template for the quasi-epitaxial growth of MoS 2 with (0 0 2) preferred orientation by enjoying the analogical hexagonal structures and the shared sulfur atoms, resulting in a benign interface of CdS/MoS 2. MoS 2 thin film is deposited on ITO/CdS substrate by in-situ hydrothermal method, which is expected to be a potential absorber material for planar heterojunction solar cell due to its high absorber coefficient and carrier mobility.